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Impact of growth rate on impurities segregation at grain boundaries in silicon during Bridgman growth

Identifieur interne : 000B52 ( Main/Repository ); précédent : 000B51; suivant : 000B53

Impact of growth rate on impurities segregation at grain boundaries in silicon during Bridgman growth

Auteurs : RBID : Pascal:13-0197464

Descripteurs français

Pascal (Inist)
- Taux croissance, Ségrégation impureté, Joint grain, Défaut cristallin, Silicium, Mécanisme croissance, Microstructure cristalline, Cuivre, Indium, Spectrométrie SIMS, Analyse chimique, Diffusion(transport), Solidification, Cristallisation, Polycristal, Germe cristallin, Si, In, Substrat cuivre, 8110A, 6172M, 6630, 8130F.
Wicri :
- concept : Cuivre.

English descriptors

KwdEn :
- Chemical analysis, Copper, Crystal defects, Crystal microstructure, Crystal seeds, Crystallization, Diffusion, Grain boundaries, Growth mechanism, Growth rate, Impurity segregation, Indium, Polycrystals, Secondary ion mass spectrometry, Silicon, Solidification.

Abstract

Bi-crystal silicon ingots with low angle grain boundaries have been grown at three different pulling rates, namely 3 13 and 40 in a small scale Bridgman type furnace. The melts have been contaminated with 50 ppma of copper or indium. Selected samples were investigated by secondary ion mass spectrometry (SIMS) chemical analysis. The results show an influence of growth rate on copper segregation. Indium segregation has also been investigated. Relative impacts of solid state diffusion and solute microsegregation during solidification on the grain boundary concentration have been investigated for each growth rate.

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Pascal:13-0197464

Le document en format XML

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<author><name sortKey="Autruffe, Antoine" uniqKey="Autruffe A">Antoine Autruffe</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>NTNU, Department of Materials Science and Engineering</s1>
<s2>Trondheim</s2>
<s3>NOR</s3>
<sZ>1 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>Norvège</country>
<wicri:noRegion>Trondheim</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Vines, Lasse" uniqKey="Vines L">Lasse Vines</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>UIO, Department of Physics</s1>
<s2>Oslo</s2>
<s3>NOR</s3>
<sZ>2 aut.</sZ>
</inist:fA14>
<country>Norvège</country>
<wicri:noRegion>Oslo</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Arnberg, Lars" uniqKey="Arnberg L">Lars Arnberg</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>NTNU, Department of Materials Science and Engineering</s1>
<s2>Trondheim</s2>
<s3>NOR</s3>
<sZ>1 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>Norvège</country>
<wicri:noRegion>Trondheim</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Di Sabatino, Marisa" uniqKey="Di Sabatino M">Marisa Di Sabatino</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>NTNU, Department of Materials Science and Engineering</s1>
<s2>Trondheim</s2>
<s3>NOR</s3>
<sZ>1 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
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<country>Norvège</country>
<wicri:noRegion>Trondheim</wicri:noRegion>
</affiliation>
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<publicationStmt><idno type="inist">13-0197464</idno>
<date when="2013">2013</date>
<idno type="stanalyst">PASCAL 13-0197464 INIST</idno>
<idno type="RBID">Pascal:13-0197464</idno>
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<seriesStmt><idno type="ISSN">0022-0248</idno>
<title level="j" type="abbreviated">J. cryst. growth</title>
<title level="j" type="main">Journal of crystal growth</title>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Chemical analysis</term>
<term>Copper</term>
<term>Crystal defects</term>
<term>Crystal microstructure</term>
<term>Crystal seeds</term>
<term>Crystallization</term>
<term>Diffusion</term>
<term>Grain boundaries</term>
<term>Growth mechanism</term>
<term>Growth rate</term>
<term>Impurity segregation</term>
<term>Indium</term>
<term>Polycrystals</term>
<term>Secondary ion mass spectrometry</term>
<term>Silicon</term>
<term>Solidification</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Taux croissance</term>
<term>Ségrégation impureté</term>
<term>Joint grain</term>
<term>Défaut cristallin</term>
<term>Silicium</term>
<term>Mécanisme croissance</term>
<term>Microstructure cristalline</term>
<term>Cuivre</term>
<term>Indium</term>
<term>Spectrométrie SIMS</term>
<term>Analyse chimique</term>
<term>Diffusion(transport)</term>
<term>Solidification</term>
<term>Cristallisation</term>
<term>Polycristal</term>
<term>Germe cristallin</term>
<term>Si</term>
<term>In</term>
<term>Substrat cuivre</term>
<term>8110A</term>
<term>6172M</term>
<term>6630</term>
<term>8130F</term>
</keywords>
<keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Cuivre</term>
</keywords>
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</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">Bi-crystal silicon ingots with low angle grain boundaries have been grown at three different pulling rates, namely 3 13 and 40 in a small scale Bridgman type furnace. The melts have been contaminated with 50 ppma of copper or indium. Selected samples were investigated by secondary ion mass spectrometry (SIMS) chemical analysis. The results show an influence of growth rate on copper segregation. Indium segregation has also been investigated. Relative impacts of solid state diffusion and solute microsegregation during solidification on the grain boundary concentration have been investigated for each growth rate.</div>
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<fA08 i1="01" i2="1" l="ENG"><s1>Impact of growth rate on impurities segregation at grain boundaries in silicon during Bridgman growth</s1>
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<fA11 i1="01" i2="1"><s1>AUTRUFFE (Antoine)</s1>
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<fA11 i1="02" i2="1"><s1>VINES (Lasse)</s1>
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<fA11 i1="03" i2="1"><s1>ARNBERG (Lars)</s1>
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<fA11 i1="04" i2="1"><s1>DI SABATINO (Marisa)</s1>
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<fA14 i1="01"><s1>NTNU, Department of Materials Science and Engineering</s1>
<s2>Trondheim</s2>
<s3>NOR</s3>
<sZ>1 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>UIO, Department of Physics</s1>
<s2>Oslo</s2>
<s3>NOR</s3>
<sZ>2 aut.</sZ>
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<fA66 i1="01"><s0>NLD</s0>
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<fC01 i1="01" l="ENG"><s0>Bi-crystal silicon ingots with low angle grain boundaries have been grown at three different pulling rates, namely 3 13 and 40 in a small scale Bridgman type furnace. The melts have been contaminated with 50 ppma of copper or indium. Selected samples were investigated by secondary ion mass spectrometry (SIMS) chemical analysis. The results show an influence of growth rate on copper segregation. Indium segregation has also been investigated. Relative impacts of solid state diffusion and solute microsegregation during solidification on the grain boundary concentration have been investigated for each growth rate.</s0>
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</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>Taux croissance</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="3" l="ENG"><s0>Growth rate</s0>
<s5>01</s5>
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<fC03 i1="02" i2="X" l="FRE"><s0>Ségrégation impureté</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="X" l="ENG"><s0>Impurity segregation</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="X" l="SPA"><s0>Segregación impureza</s0>
<s5>02</s5>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>Joint grain</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="3" l="ENG"><s0>Grain boundaries</s0>
<s5>03</s5>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>Défaut cristallin</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>Crystal defects</s0>
<s5>04</s5>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Silicium</s0>
<s2>NC</s2>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>Silicon</s0>
<s2>NC</s2>
<s5>05</s5>
</fC03>
<fC03 i1="06" i2="X" l="FRE"><s0>Mécanisme croissance</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="X" l="ENG"><s0>Growth mechanism</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="X" l="SPA"><s0>Mecanismo crecimiento</s0>
<s5>06</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Microstructure cristalline</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Crystal microstructure</s0>
<s5>07</s5>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>Cuivre</s0>
<s2>NC</s2>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="3" l="ENG"><s0>Copper</s0>
<s2>NC</s2>
<s5>08</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Indium</s0>
<s2>NC</s2>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Indium</s0>
<s2>NC</s2>
<s5>09</s5>
</fC03>
<fC03 i1="10" i2="X" l="FRE"><s0>Spectrométrie SIMS</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="X" l="ENG"><s0>Secondary ion mass spectrometry</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="X" l="SPA"><s0>Espectrometría SIMS</s0>
<s5>10</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Analyse chimique</s0>
<s5>11</s5>
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<fC03 i1="11" i2="3" l="ENG"><s0>Chemical analysis</s0>
<s5>11</s5>
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<fC03 i1="12" i2="3" l="FRE"><s0>Diffusion(transport)</s0>
<s5>12</s5>
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<fC03 i1="12" i2="3" l="ENG"><s0>Diffusion</s0>
<s5>12</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>Solidification</s0>
<s5>13</s5>
</fC03>
<fC03 i1="13" i2="3" l="ENG"><s0>Solidification</s0>
<s5>13</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>Cristallisation</s0>
<s5>14</s5>
</fC03>
<fC03 i1="14" i2="3" l="ENG"><s0>Crystallization</s0>
<s5>14</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>Polycristal</s0>
<s5>15</s5>
</fC03>
<fC03 i1="15" i2="3" l="ENG"><s0>Polycrystals</s0>
<s5>15</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>Germe cristallin</s0>
<s5>29</s5>
</fC03>
<fC03 i1="16" i2="3" l="ENG"><s0>Crystal seeds</s0>
<s5>29</s5>
</fC03>
<fC03 i1="17" i2="3" l="FRE"><s0>Si</s0>
<s4>INC</s4>
<s5>46</s5>
</fC03>
<fC03 i1="18" i2="3" l="FRE"><s0>In</s0>
<s4>INC</s4>
<s5>47</s5>
</fC03>
<fC03 i1="19" i2="3" l="FRE"><s0>Substrat cuivre</s0>
<s4>INC</s4>
<s5>48</s5>
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<fC03 i1="20" i2="3" l="FRE"><s0>8110A</s0>
<s4>INC</s4>
<s5>71</s5>
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<s4>INC</s4>
<s5>72</s5>
</fC03>
<fC03 i1="22" i2="3" l="FRE"><s0>6630</s0>
<s4>INC</s4>
<s5>73</s5>
</fC03>
<fC03 i1="23" i2="3" l="FRE"><s0>8130F</s0>
<s4>INC</s4>
<s5>74</s5>
</fC03>
<fN21><s1>182</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
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Impact of growth rate on impurities segregation at grain boundaries in silicon during Bridgman growth

Impact of growth rate on impurities segregation at grain boundaries in silicon during Bridgman growth

Descripteurs français

English descriptors

Abstract

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Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri